JPH0481335B2 - - Google Patents

Info

Publication number
JPH0481335B2
JPH0481335B2 JP57005918A JP591882A JPH0481335B2 JP H0481335 B2 JPH0481335 B2 JP H0481335B2 JP 57005918 A JP57005918 A JP 57005918A JP 591882 A JP591882 A JP 591882A JP H0481335 B2 JPH0481335 B2 JP H0481335B2
Authority
JP
Japan
Prior art keywords
layer
integrated circuit
ion implantation
metal wiring
semi
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57005918A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58123753A (ja
Inventor
Masayoshi Yagyu
Takehisa Hayashi
Hironori Tanaka
Akira Masaki
Masahiro Hirayama
Masayuki Ino
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Nippon Telegraph and Telephone Corp
Original Assignee
Hitachi Ltd
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd, Nippon Telegraph and Telephone Corp filed Critical Hitachi Ltd
Priority to JP591882A priority Critical patent/JPS58123753A/ja
Publication of JPS58123753A publication Critical patent/JPS58123753A/ja
Publication of JPH0481335B2 publication Critical patent/JPH0481335B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5222Capacitive arrangements or effects of, or between wiring layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/301Electrical effects
    • H01L2924/3011Impedance

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Junction Field-Effect Transistors (AREA)
JP591882A 1982-01-20 1982-01-20 半導体集積回路 Granted JPS58123753A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP591882A JPS58123753A (ja) 1982-01-20 1982-01-20 半導体集積回路

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP591882A JPS58123753A (ja) 1982-01-20 1982-01-20 半導体集積回路

Publications (2)

Publication Number Publication Date
JPS58123753A JPS58123753A (ja) 1983-07-23
JPH0481335B2 true JPH0481335B2 (en]) 1992-12-22

Family

ID=11624267

Family Applications (1)

Application Number Title Priority Date Filing Date
JP591882A Granted JPS58123753A (ja) 1982-01-20 1982-01-20 半導体集積回路

Country Status (1)

Country Link
JP (1) JPS58123753A (en])

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0624223B2 (ja) * 1983-12-09 1994-03-30 株式会社東芝 マイクロ波集積回路装置
JPH07120706B2 (ja) * 1986-06-27 1995-12-20 日本電信電話株式会社 半導体集積回路の配線構造
US5942773A (en) * 1996-06-04 1999-08-24 Fujitsu Limited Field effect transistor with reduced delay variation
JP3416537B2 (ja) 1998-11-13 2003-06-16 富士通カンタムデバイス株式会社 化合物半導体装置及びその製造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5141977A (ja) * 1974-10-07 1976-04-08 Suwa Seikosha Kk Handotaisochi
JPS5643757A (en) * 1979-09-18 1981-04-22 Nec Corp Gallium arsenic type integrated circuit

Also Published As

Publication number Publication date
JPS58123753A (ja) 1983-07-23

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